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本专利提出一种用离子束刻蚀CdHgTe半导体材料的方法。图I中的1表示衬底(陶瓷或蓝宝石),用胶层2把Cd_(0.2)Hg_(0.8)Te半导体层3粘在衬底上。对红外光敏感的半导体薄层厚度为20μm。用刻蚀速率很小的薄层4掩盖住不需要刻蚀的半导体表面部分,几微米厚的光刻胶层或钛层就能满足掩膜的要求,未掩膜的半导体表而部分5被刻蚀到衬底1的深度。将表示在图I中的半导体放入一个离子束刻蚀装置中,最好是用氩离子垂直入射刻蚀半导体表面。在一次成功的实验中,压强为8×10~(-3)乇,电压是700V,刻蚀时间是4小时。在
This patent proposes a method of etching a CdHgTe semiconductor material by ion beam. I in Figure I shows the substrate (ceramic or sapphire), the adhesive layer 2 Cd_ (0.2) Hg_ (0.8) Te semiconductor layer 3 is stuck to the substrate. The thickness of the infrared-sensitive semiconductor thin layer is 20 μm. Mask portions of the semiconductor surface which are not to be etched are masked with a thin layer 4 of a very low etching rate which can satisfy the requirements of the mask with a few micrometers thick of the photoresist layer or the titanium layer, The depth of the substrate 1 is etched. The semiconductor shown in FIG. 1 is placed in an ion beam lithography apparatus. Preferably, the semiconductor surface is etched vertically with argon ions. In a successful experiment, the pressure was 8 × 10 -3 Torr, the voltage was 700V, and the etching time was 4 hours. in