论文部分内容阅读
研究了在 ＧａＡｓ （１１１）衬底上生长的六角相 ＧａＮ的极性的相关关系。在高 Ⅴ /Ⅲ比的条件下用ＭＯＶＰＥ和ＭＯＭＢＥ方法生长的ＧａＮ的极性和ＧａＡｓ衬底的极性一致；在（１１１）Ａ－Ｇａ表面上的生长层呈现Ｇａ的极性，而在（１１１）Ｂ－Ａｓ表面上的生长层呈现Ｎ的极性。然而，在低的Ⅴ /Ⅲ比，或采用一个ＡＩＮ中间层的条件下，用ＨＶＰＥ和ＭＯＭＢＥ方法在ＧａＡｓ（１１１）Ｂ表面上生长的ＧａＮ呈现出Ｇａ的极性。目前，其原因尚不清楚，但是这些结果表明采用ＨＶＰＥ生长方法或用一高温ＡｌＮ阻挡层可以得到高质量的ＧａＮ。
The relationship between the polarities of hexagonal GaN grown on GaAs (111) substrates was investigated. The polarity of GaN grown by the MOVPE and MOMBE methods at high V / III ratio is consistent with the polarity of the GaAs substrate; the growth layer on the (111) A-Ga surface exhibits the polarity of Ga, 111) The growth layer on the B-As surface exhibits N polarity. However, GaN grown on the surface of GaAs (111) B by the HVPE and MOMBE methods exhibits a Ga polarity at a low V / III ratio or using an AIN interlayer. At present, the reason for this is not clear, but these results indicate that high-quality GaN can be obtained by HVPE growth method or by using a high-temperature AlN barrier layer.