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本文指出,通过改变偏压和注入脉冲条件,单轴应力下的DLTS方法可以用来分别研究硅中纯的中性态和负电态A中心在单轴应力下的择优取向,并首次用此法测得中性态和负电态A中心在<100>单轴应力下不等价取向间能量差的压力系数,进而求得<100>单轴应力下不等价取向间电子能量差的压力系数。和已报道的单轴应力下EPR测得的结果作了比较。
This paper points out that the DLTS method under uniaxial stress can be used to study the preferred orientations of the pure neutral and negative A centers of silicon under uniaxial stress respectively by changing the bias and implantation pulse conditions. The pressure coefficient of inequality energy difference between center of neutral state and negative state A under <100> uniaxial stress was measured, and then the pressure coefficient of difference of electron energy between different orientation under uniaxial stress . It has been compared with the reported EPR measurements under uniaxial stress.