通过电沉积,在Al2O3模板中我合成直径大约80 nm和长度2 m 单晶形GaN 纳米棒。这些纳米棒通过X射线衍射仪 (XRD)、扫描电子显微镜 (SEM)、透射电子显微镜 (TEM)、选区电子衍射仪 (SAED)、X射线能谱仪分析 (EDS),结果显示这些纳米棒不仅有很高的产率,而且具有形貌相同的化学计量的单晶形的GaN的性质。同时样品的光学性质也被测定,它在318 nm具有强的发射峰,这对GaN纳米材料应用是一个新的突破。* Through electrodeposition, in the Al2O3 template, I synthesize single-crystal GaN nanorods with a diameter of about 80 nm and a length of 2 m. These nanorods were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDS) Have a high yield, and have the properties of the same-stoichiometric single-crystal form of GaN. At the same time, the optical properties of the samples were also measured. It has a strong emission peak at 318 nm, which is a new breakthrough in the application of GaN nanomaterials. *