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在返回式卫星上搭载生长了砷化镓单晶 ,Hall分析表明空间生长的砷化镓单晶呈半绝缘特性 .空间生长的半绝缘砷化镓单晶的结构特性得到了明显改善 ,均匀性提高 .与地面生长的半绝缘砷化镓单晶相比 ,空间生长的半绝缘砷化镓单晶的化学配比及其均匀性得到了显著改善 .以空间生长半绝缘砷化镓单晶为基底 ,采用直接离子注入工艺制造的模拟开关集成电路的特性好于地面材料 .证明半绝缘砷化镓单晶的化学配比对相关器件的性能影响严重 .
The growth of gallium arsenide single crystals on the return satellites, Hall analysis showed that the growth of space-grown gallium arsenide single crystal was semi-insulating properties of the spatial growth of semi-insulating gallium arsenide crystal structure has been significantly improved, the uniformity Compared with the growth of semi-insulating gallium arsenide grown on the ground compared to the space-grown semi-insulating GaAs single crystal chemical ratio and its uniformity has been significantly improved.With space-grown semi-insulating gallium arsenide single crystal as Substrate, the characteristics of the analog switch integrated circuit fabricated by direct ion implantation are better than that of the ground material, which proves that the stoichiometry of semi-insulating gallium arsenide single crystal has a serious impact on the performance of related devices.