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基于Chartered 0.18μm标准CMOS工艺,设计了一种适用于无线传感器的高效低开启电压CMOS整流电路。为提高电路集成度,整流电路中的倍压模块采用了MOSFET代替肖特基二极管。整流电路中通常采用的Dickson结构倍压电路受体效应等的影响,单级电压增益降低;在多级Dickson结构的倍压电路中,增益随着级数的增加加剧恶化。设计的整流电路采用新型结构倍压电路有效抑制了体效应等的影响,从而使电压增益具有显著提升。电路管芯面积仅为0.095 mm×0.077 mm,芯片测试结果表明,在输入电压为6 d Bm V(2 m V)时能够稳定输出电压2.2 V的信号,功率转换率达55.6%。
Based on the Chartered 0.18μm standard CMOS technology, a high efficiency and low turn-on voltage CMOS rectifier for wireless sensors is designed. In order to improve the circuit integration, the voltage doubler module in the rectifier circuit uses a MOSFET instead of a Schottky diode. The common-mode Dickson structure voltage-doubler circuit, such as the receptor effect, reduces the single-stage voltage gain. In the multi-stage Dickson structure, the gain aggravates with the increase of the series number. The design of the rectifier circuit using a new structure of the voltage doubler effectively suppress the effect of the body, so that the voltage gain has significantly improved. The circuit die area is only 0.095 mm × 0.077 mm. The chip test result shows that the signal of 2.2 V can be stably output when the input voltage is 6 d Bm V (2 m V), and the power conversion rate is 55.6%.