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本文报道了SiO_X(X≈2)膜的淀积/氧化生长工艺,通过控制氧含量X的值而达到控制膜折射率的目的,所生长的膜已应用于半导体集成光电子电路中聚酰亚胺P.I/SiO_X(X≈2)介质光波导的研制工作中.
In this paper, the deposition / oxidation growth process of SiO_X (X≈2) films is reported. The control of the refractive index of the films is achieved by controlling the oxygen content X. The grown films have been used in the polyimide integrated optoelectronic circuits PI / SiO_X (X ≈ 2) medium optical waveguide research and development work.