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在SnO_2薄膜的淀积过程中,适量掺F能够降低薄膜的电阻值。获得的最低膜电阻值为3.1Ω/□。重掺F还可以提高薄膜的可见光透过率。
In the deposition of SnO 2 film, the appropriate amount of F can reduce the resistance of the film. The lowest membrane resistance value obtained was 3.1 Ω / □. Heavy doped F can also improve the visible light transmittance of the film.