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磁性多层膜常用磁控溅射的方法制备,并且以金属Ta做为缓冲层。本研究利用这种方法在单晶硅基片上沉积了Ta/NiFe/Ta薄膜。采用X射线光电子能谱(XPS)对该薄膜进行了深度剖析,并且对获得的Ta 4f和Si 2p的高分辨率XPS谱进行计算机谱图拟合分析。结果表明:磁控溅射这种高能量制膜技术导致了在SiO2/Ta界面处发生了化学反应:15SiO2＋37Ta=6 Ta2O5＋5 Ta5Si3,该反应使得界面有“互混层”存在,从而导致诱发NiFe膜(111)织构所需的Ta缓冲层实际厚度的增加。从本研究还可以看出XPS是表征磁性薄膜界面化学状态的一种有利工具。
Magnetic multi-layer film commonly used magnetron sputtering method, and the metal Ta as a buffer layer. In this study, a Ta / NiFe / Ta thin film was deposited on a monocrystalline silicon substrate by this method. The films were deeply analyzed by X-ray photoelectron spectroscopy (XPS), and computer spectra fitting analysis was performed on the obtained high resolution XPS spectra of Ta 4f and Si 2p. The results show that magnetron sputtering is a kind of high-energy film-forming technique that leads to chemical reaction at the SiO2 / Ta interface: 15SiO2 + 37Ta = 6 Ta2O5 + 5 Ta5Si3. (111) texture required Ta buffer layer actual thickness increase. It can also be seen from this study that XPS is an advantageous tool to characterize the chemical state of the magnetic thin film interface.