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本文描述了确定装配在微带中的微波晶体管管壳的寄生电抗的谐振测量法。给出了由额定尺寸和按比例放大模型得到的两种类型管壳的测量结果。最后简要地讨论了这些寄生参数对典型微波场效应晶体管管芯特性的影响。
This article describes a resonant measurement that determines the parasitic reactance of a microwave transistor package that is mounted in a microstrip. The results of the measurement of two types of tube shells obtained from the rated dimensions and the scaled-up models are given. Finally, the effects of these parasitic parameters on the die characteristics of a typical microwave FET are briefly discussed.