论文部分内容阅读
利用离子注入法在Si(001)衬底上先后注入了Ga+和Sb+,注入能量分别为140,220 keV,注入剂量分别为8.2×1016,6.2×1016cm-2,然后对样品分别经过一次退火和二次退火处理制备出了量子点材料.用透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)观察了退火后量子点截面像.实验结果表明,经二次退火生长的量子点晶格结构和Si衬底损伤的修复要明显优于一次退火.
Ga + and Sb + were implanted into Si (001) substrate by ion implantation. The energy of implantation was 140 and 220 keV, respectively. The implantation doses were 8.2 × 10 16 and 6.2 × 10 16 cm -2 respectively. Then the samples were annealed once and twice The QDs were annealed to prepare the QDs.The quantum dot cross sections after annealing were observed by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The experimental results show that the lattice structure of quantum dots grown by secondary annealing and Si substrate damage repair is significantly better than an anneal.