半导体制造工艺中的薄膜生长,迄今广泛应用的是热CVD法(Chemical VaporDeposition)和等离子CVD法,而这些方法是在高温状态下进行的,因此,对那些衬底耐热性较差或者经高温处理其性能和可靠性要降低的器件来说,利用这些方法有一定的困难。为了提高大规模集成电路、超大规模集成电路的性能、集成度和成品率,迫切需要一种能在低温下形成高质量薄膜的薄膜生长新技术。 Thin-film growth in the semiconductor manufacturing process has hitherto been widely applied by the thermal CVD method and the plasma CVD method, and these methods are performed at a high temperature, and therefore, those which are inferior in heat resistance or high temperature There are some difficulties in using these methods to handle devices whose performance and reliability are to be reduced. In order to improve the performance, integration and yield of LSIs and VLSIs, there is an urgent need for a new thin film growth technology capable of forming high quality thin films at low temperatures.