用Ｘ射线衍射分析、二次离子质谱、卢瑟福背散射谱、俄歇电子能谱等表面分析技术，研究了Ｔｉ膜与ＡｌＮ陶瓷衬底的界面固相反应．在高真空中用电子束蒸发的方法在抛光的２００℃ＡｌＮ陶瓷衬底上淀积２００ｎｍ的Ｔｉ膜，并在真空恒温炉中退火．实验表明，退火中Ｔｉ膜与ＡｌＮ界面发生了扩散与反应．６５０℃，１ｈ退火已观测到明显的界面反应．界面反应产物主要是钛铝化物及ＴｉＮ化合物．铝化物是ＴｉＡｌ二元化合物和ＴｉＡｌＮ三元化合物，８５０℃，４ｈ退火后则主要由Ｔｉ２ＡｌＮ组成． The interface solid state reaction between Ti film and AlN ceramic substrate was studied by X-ray diffraction analysis, secondary ion mass spectrometry, Rutherford backscattering spectroscopy and Auger electron spectroscopy. A 200 nm Ti film was deposited on a polished 200 ° C AlN ceramic substrate by electron beam evaporation in a high vacuum and annealed in a vacuum oven. Experiments show that the annealing Ti film and AlN interface diffusion and reaction occurred. 650 ℃, 1h annealing has been observed obvious interface reaction. Interface reaction products are mainly titanium aluminide and Ti  N compounds. Aluminum is Ti  Al binary compounds and Ti  Al  N ternary compounds, 850 ℃, 4h after annealing mainly composed of Ti2AlN.