本文在4.2K下测定了液相外延HgCdTe MIS结构样品的电容谱,磁阻振荡以及迴旋共振效应,并从实验测量结果,采用物理参数拟合法,确定了该样品在电量子限条件下反型层电子子能带结构,包括基态子能带能量E_o、费密能级E_F,子能带电子有效质量m~*(E_F)、m~*(E_o)、反型层平均厚度Z_i、耗尽层厚度Z_d,以及它们随子能带电子浓度N_s的变化。 In this paper, the capacitance, reluctance and cyclotron resonance of the HgCdTe MIS structure samples were measured at 4.2K. The experimental results and the physical parameter fitting method were used to determine the charge-inversion The electronic sub-band structure of the layer includes the ground state sub-band energy E_o, the Fermi level E_F, the effective electron mass sub-band m * E_F, the m_ * E_o, the average thickness of the inversion layer Z_i, Layer thickness Z_d, and their variation with the electron band concentration N_s.