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本文通过光致发光手段研究了4.2K下Ga_(1-x)AlxAs中等电子杂质氮的发光行为.利用离子注入及适当退火在 Ga_(1-x)AlxAs中获得约 10~(18)/cm~3的氮浓度.实验观察到由于注氮在X导带极小值下面形成的等电子束缚态相关的氮发射带及其声子边带.在4.2K下观察到随退火温度上升及氮浓度增加形成的氮峰增长.测定了氮能级位置随铝组分x的变化关系.同时测量了不同组分原始样品的带边峰位置,初步确定了4.2K下带边能量随组分x变化的经验公式.利用两能谷近似计算了氮束缚能级的位置,理论与实验有较好的符合.对比GaAs_(1-x)Px:N的结果,对由于电负性差异和晶格畸变而引起的氮等电子杂质势随x的变化作了讨论.
In this paper, the photoluminescence (PL) method was used to study the luminescence behavior of nitrogen at 4.2K for Ga (1-x) AlxAs, which was obtained by ion implantation and annealing at about 10-18 / cm ~ 3, and the nitrogen emission bands and their phonon sidebands due to the formation of isopronically bound states formed by the nitrogen injection at the minimum value of the X conduction band were observed experimentally with the increase of annealing temperature and nitrogen The concentration of nitrogen increased.The formation of nitrogen level position with the change of aluminum composition x.At the same time measured the peak position of the different components of the original sample peak initially determined under the 4.2K band edge energy with the component x (1-x) Px: N is used to calculate the position of the nitrogen binding energy level, which is in good agreement with the experimental results.Comparing the results of GaAs_ (1-x) Deformation caused by nitrogen and other electronic potential changes with x are discussed.