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采用浓度为10%的氢氟酸(HF)刻蚀6H-SiC单晶片,研究了HF刻蚀时间对Ni/6H-SiC接触性质的影响.经24h刻蚀的SiC基片在溅射Ni层后,其接触表现良好线性的电流-电压(I-V)曲线.低于这个腐蚀时间的接触具有明显的势垒,但在大于1000℃快速退火后,也得到了良好线性的I-V曲线.X射线衍射(XRD)和俄歇能谱(AES)深度元素分析表明Ni2Si和C是快速退火后的主要产物.XRD和低能反射电子能量损失谱表明表层的C元素是以非晶态存在.通过研究高温快速退火下元素的互扩散及HF与SiC表层反应机理,发现SiC表面富碳层是这两种方法形成欧姆接触的关键因素.
The effect of HF etching time on the contact properties of Ni / 6H-SiC was investigated by hydrofluoric acid (HF) etching of 6H-SiC single crystal at a concentration of 10% , The contact showed a good linear current-voltage (IV) curve.The contact below this etching time had a significant barrier but a good linear IV curve was also obtained after rapid annealing at above 1000 ° C. X-ray diffraction XRD and AES analysis show that Ni2Si and C are the main products after rapid annealing.The energy loss spectra of XRD and low energy reflection electron indicate that the C element in the surface layer exists in amorphous state.Through the study of high temperature and rapid The mutual diffusion of elements under annealing and the reaction mechanism between HF and SiC surface. It is found that the carbon-rich layer on the SiC surface is the key factor for the formation of ohmic contact between these two methods.