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本文讨论了Si单晶中磷扩散造成的扩散层晶格的残余应变,此应变与磷浓度的关系,以及它的测量方法和测量结果。还讨论了在此应变梯度驱动下在扩散层中产生失配位错网络的条件和影响失配位错的因素,及其在Si的集成技术上的意义。
In this paper, we discuss the residual strain of the diffusion layer lattice caused by phosphorus diffusion in Si single crystal, the relationship between strain and phosphorus concentration, its measuring method and measurement results. The conditions of misfit dislocation network in diffusion layer and the factors affecting the mismatch dislocation in the diffusion layer driven by this strain gradient are also discussed and their significance in Si integration.