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用一种简单的化学方法在ＬＥＣ ＧａＡｓ晶体表面实现了Ｃｕ的沉积，沉积的Ｃｕ层均匀性、牢固性良好，厚度达到无限源扩散的要求．本文介绍了化学镀铜液的配制及镀铜工艺，并对化学镀铜的机理进行了讨论。
A simple chemical method was used to deposit Cu on the surface of LEC GaAs crystals. The deposited Cu layer had good uniformity and good robustness, and the thickness reached the requirement of infinite source diffusion. This paper introduced the preparation of electroless copper plating solution and copper plating process, and discussed the mechanism of electroless copper plating.