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MBE GaAs单晶薄膜的载流子浓度(1.8-8)×10~(16)cm~(-3),室温迁移率 3000-5000cm~2/V.3最高达5466cm~2/V.s,相应的77K迁移率为1.59 ×10~4cm~2/V.s.对高杂质浓度的外延层进行了阴极荧光(4.2K) 和SIMS 测量分析.
The carrier concentration (1.8-8) × 10 ~ (16) cm -3 and the room temperature mobility 3000-5000cm ~ 2 / V.3 of MBE GaAs single crystal film are up to 5466cm 2 / Vs, 77K mobility of 1.59 × 10 ~ 4cm ~ 2 / Vs for high impurity concentration of the epitaxial layer was carried out by the fluorescence of the cathode (4.2K) and SIMS measurement and analysis.