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钛酸钡、钛酸铅、锆钛酸铅镧等铁电陶瓷已在压电、热释电器件中得到广泛的应用,其薄膜形式由于能集成化,可用于多种微电子器件,如非挥发性存储器(NVFRAM)、声表面波器件(SAW)、光开关、波导、调制器等,在微电子和光电子领域有巨大应用潜力。掺镧钛酸铅薄膜有较强的电光特性,铁电薄膜的制备方法常用的有磁控溅射、Sol-Gel和MOCVD,磁控溅射在精确控制薄膜的化学计量比上有困难,Sol-Gel和MOCVD工艺要求特殊的金属有机化合物;脉冲激光沉积(pulsed laser deposition)方法,简称PLD,用陶瓷作靶材可以保持靶、膜成分一致,能在大氧压下沉积高熔点材料,目前采用PLD技术已成功地制备出YBCO,PZT等多种薄膜。在硅衬底上以PLD法制备多晶(Pb,La)TiO~3薄膜已有报道。
Ferroelectric ceramics such as barium titanate, lead titanate and lead lanthanum zirconate titanate have been widely used in piezoelectric and pyroelectric devices. Since the film form can be integrated, it can be used in many kinds of microelectronic devices, NVFRAMs, SAWs, optical switches, waveguides, modulators, etc., have tremendous potential in the field of microelectronics and optoelectronics. The lanthanum-doped lead titanate film has strong electro-optical properties. The magnetron sputtering, Sol-Gel and MOCVD commonly used in the preparation of ferroelectric thin films have difficulty in accurately controlling the stoichiometry of the films. Sol -Gel and MOCVD process require special metal organic compounds; pulsed laser deposition (referred to as PLD), with ceramic as a target to maintain the target, the film composition of the same, can be deposited at high oxygen pressure high melting point material, the current Using PLD technology has successfully prepared YBCO, PZT and other films. The PLD method for preparing polycrystalline (Pb, La) TiO 3 thin films on silicon substrate has been reported.