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利用国产MBE系统外延生长的调制掺杂材料,试制出选择性掺杂晶体管或高电子迁移率晶体管(HEMT)。准增强型器件的跨导为60～90mS/mm。有些器件发现有负阻,跨导达190mS/mm。
A selective doping transistor or a high electron mobility transistor (HEMT) has been fabricated using modulated epitaxial growth grown by a domestic MBE system. Transconductance of the quasi-enhanced device is 60 ~ 90mS / mm. Some devices are found to have negative resistance, transconductance of 190mS / mm.