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用固态源MBE技术生长了AlGaAsSb/InGaAsSb多量子阱材料，研究了通过改变多量子阱AlGaAsSb/InGaAsSb中的结构参数,如多量子阱中InGaAsSb的阱宽，AlGaAsSb的垒宽及垒层中Al组分和阱层中的In组分，多量子阱中的阱数等，来提高AlGaAsSb/InGaAsSb多量子阱的PL强度。
The growth of AlGaAsSb / InGaAsSb multiple quantum well materials by solid-state source MBE technology was studied by changing the structure parameters of the multi-quantum well AlGaAsSb / InGaAsSb such as the well width of InGaAsSb, the base width of AlGaAsSb and the Al group In composition in the well and the well layer, the number of wells in the multi-quantum well, and the like, the PL intensity of the AlGaAsSb / InGaAsSb multiple quantum well is increased.