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在用来自于汞灯的185nm紫外光直接光解SiH/NH_3混合气体的基础上,采用光-CVD(化学气相淀积)技术在硅衬底上淀积了氮化硅薄膜。在没有使用任何像汞蒸气那种光致敏化剂的情况下,用为这种直接光解而研制的光-CVD系统获得了10nm/min的淀积速率。测量了淀积薄膜的红外吸收光谱、俄歇谱、折射率和在缓冲HF溶液中的腐蚀速率。测量表明,薄膜中氢原子含量为1.4×10~(22)/cm~3并且,薄膜的成分是富氮的。击穿电场强度、漏电流和表面电荷密度等特性都优于常规的等离子-CVD氮化硅薄膜。
Based on the direct photolysis of SiH / NH 3 mixed gas with 185 nm UV light from a mercury lamp, a silicon nitride film was deposited on the silicon substrate using light-CVD (chemical vapor deposition) technique. Without any use of any photo-sensitizer such as mercury vapor, a deposition rate of 10 nm / min was obtained with an optical-CVD system developed for this direct photolysis. Infrared absorption spectra, Auger spectra, refractive index and corrosion rate in buffered HF solution were measured. The measurement shows that the content of hydrogen in the film is 1.4 × 10 ~ (22) / cm ~ 3 and the composition of the film is nitrogen-rich. Breakdown electric field strength, leakage current and surface charge density and other characteristics are superior to the conventional plasma-CVD silicon nitride film.