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采用脉冲激光沉积(PLD)技术,利用LSCO/CeO2/YSZ多异质缓冲层,在Si(100)基片上成功地制备了c轴一致取向的Bi_(3·15)Nd_(0·85)Ti_3O_(12)(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构、取向和形貌特征,考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响,确定了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型的蝴蝶形曲线,表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与薄膜取向的相关性.
The c-axis uniformly oriented Bi 3. 15 Nd 0.885 Ti 3 O 3 was successfully deposited on Si (100) substrate by pulsed laser deposition (PLD) technique and LSCO / CeO 2 / (12) (BNT) ferroelectric thin films.The phase structure, orientation and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effects of deposition temperature and oxygen partial pressure on the microstructures of BNT thin films , Orientation and morphology of the BNT films were investigated.The optimum deposition conditions of the BNT films were determined.The CV curve of the BNT films prepared under the optimal conditions obtained a typical butterfly curve which showed that the films had good electrode polarization Reversing the storage characteristics.Finally, the relationship between the ferroelectric properties of BNT films and the orientation of the films was discussed.