二、外延淀积1.外延工艺外延工艺是一种在衬底上生长同样结构晶体的高温化学工艺.为获得与基片材料“相似”的外延层,应满足以下条件:(a)衬底和淀积层的原子间距必须大致相等.(b)按预定的衬底晶向淀积.(c)提高衬底温度使源热分解,但又不使衬底分解或蒸发. Second, the epitaxial deposition 1. Epitaxial epitaxial process is a growth of the same crystal structure on the substrate of high-temperature chemical process To obtain the substrate material “similar” to the epitaxial layer, the following conditions should be met: (a) substrate And the deposited layers must be approximately equal (b) deposited in a predetermined substrate orientation (c) raising the substrate temperature to thermally decompose the source without decomposing or evaporating the substrate.