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使用 Ga/As Cl_3H_2系统,以 CrO_2Cl_2作掺杂剂生长半绝缘掺铬GaAs 外延层,电阻率的数量级可达10~8欧姆·厘米。这表明铬起着深能级受主的作用,其激活能为0.57电子伏,约可补偿浓度为10~(16)厘米~(-3)的浅能级施主。载流子浓度为1.2×10~(17)厘米~(-3)、迁移率为5200厘米~2/伏·秒的掺硫 n 型层可在一次试验中连续生长在半绝缘外延层上。边界层陡峭适用于场效应晶体管。
Using Ga / As Cl 3 H 2 system, the semi-insulating doping GaAs epitaxial layer is grown by using CrO_2Cl_2 as dopant, the resistivity can reach 10-8 ohm · cm. This indicates that Cr plays a role of a deep level acceptor with an activation energy of 0.57 electron volts, which can compensate for the shallow level donor with a concentration of 10 ~ (16) cm ~ (-3). The sulfur-doped n-type layer with a carrier concentration of 1.2 × 10 ~ (17) cm -3 and a mobility of 5200 cm -2 / μsec can be continuously grown on the semi-insulating epitaxial layer in one experiment. The steep boundary layer is suitable for field effect transistors.