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采用热蒸发法在玻璃衬底上沉积CsI薄膜,然后进行不同温度的真空热处理。用X射线衍射仪、扫描电子显微镜对CsI薄膜样品进行分析,测得~(241)Am的脉冲高度谱,通过单光子法测量样品的光产额。结果表明,该CsI薄膜沿(200)晶面择优取向生长。退火温度对CsI薄膜的晶体结构和闪烁性能有很大的影响。CsI薄膜经过250℃退火后,(200)晶面衍射峰明显增强,结晶状态最佳,光产额最高,而退火温度达400%时,薄膜结构发生显著变化,闪烁性能急剧下降。
The CsI film was deposited on a glass substrate by thermal evaporation and then vacuum heat-treated at different temperatures. The CsI thin film samples were analyzed by X-ray diffractometer and scanning electron microscope. The pulse height spectrum of ~ (241) Am was measured. The light yield of samples was measured by single photon method. The results show that the CsI film grows preferentially along the (200) plane. The annealing temperature has a great influence on the crystal structure and scintillation performance of CsI films. After annealing at 250 ℃, the diffraction peak of (200) crystal surface of CsI thin film is obviously enhanced, the crystal state is the best, and the light yield is the highest. When the annealing temperature reaches 400%, the structure of the thin film changes dramatically and the scintillation performance declines sharply.