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针对限幅低噪声放大器使用过程中出现输出不稳定现象,利用扫描电镜和能谱仪对场效应管栅极表面的金属缺失层和栅源之间的金属堆积物进行微观分析,寻找放大器工作不正常的原因。结果表明:场效应管栅极Au层的电迁移,使导线局部电阻增大,温度升高,导致Au的热迁移加重,引起导线出现孔洞和栅源中间堆积金属颗粒,使栅极导线出现开路和栅源极间产生不稳定接触,最终导致场效应管的工作参数漂移和放大器工作不正常。
In view of the instability of output during the operation of limiting low-noise amplifier, the microscopic analysis of the metal deposit between the metal-missing layer and the gate source of the gate surface of the field-effect transistor by scanning electron microscopy and energy dispersive spectroscopy Normal reason. The results show that the electromigration of the gate Au layer in the field-effect transistor leads to the increase of the local resistance of the wire and the increase of the temperature, which leads to the aggravation of the Au heat transfer, resulting in the accumulation of metal particles in the wire hole and the gate source. And gate-source instability between the contacts, eventually leading to the FET FET operating parameters drift and the amplifier is not working properly.