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研究了抛光液中磨料、螯合剂、表面活性剂和氧化剂对Cu/Ru/SiO2材料去除速率选择比的影响。利用电化学和磨料颗粒表面Zeta电位对H2O2和KIO4在Cu/Ru抛光中的作用进行了分析。采用原子力显微镜观察了Cu表面的微观形貌。结果表明:无任何氧化剂的抛光液中,Cu和SiO2的抛光速率随着磨料质量分数的升高而增加,Ru的抛光速率几乎为0nm/min,磨料含量对材料抛光速率选择比的影响最大;抛光液中加入表面活性剂可使Cu表面粗糙度由6.76 nm降低到1.286 nm。由于Cu和Ru表面氧化物致密,导致电离的金属离子有限,结果 Ru和Cu的抛光速率随着螯合剂体积的增加变化不明显;H2O2可显著提高Cu的抛光速率,而Ru的抛光速率由0nm/min只提升到24.3 nm/min,KIO4可同时提高Cu,Ru和SiO2的抛光速率,且Cu和Ru抛光速率比接近1∶1。
The effects of abrasive, chelating agent, surfactant and oxidant in the polishing solution on the selectivity of Cu / Ru / SiO2 material removal rate were studied. The effects of H2O2 and KIO4 on Cu / Ru polishing were analyzed by electrochemical and abrasive Zeta potential. Atomic force microscope was used to observe the microstructure of Cu surface. The results show that the polishing rate of Cu and SiO2 increases with the increase of the mass fraction of abrasive in the polishing solution without any oxidant, the polishing rate of Ru is almost 0 nm / min, and the influence of abrasive content on the selection rate of material polishing rate is the most. Adding surfactant into the polishing liquid can reduce the surface roughness of Cu from 6.76 nm to 1.286 nm. Due to the dense oxide on the surface of Cu and Ru, ionized metal ions are limited. As a result, the polishing rate of Ru and Cu changes little with the volume of chelating agent. H2O2 can significantly increase the polishing rate of Cu, while the polishing rate of Ru increases from 0nm / min to only 24.3 nm / min, KIO4 can simultaneously increase the polishing rate of Cu, Ru and SiO2, and the Cu and Ru polishing rate ratio close to 1: 1.