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测量了室温和液氮背景辐射条件下长波光导ＨｇＣｄＴｅ探测器的电阻，从电阻的变化研究了背景辐射对器件电阻的影响，结果表明：在高性能探测器中，室温背景辐射造成探测器电阻的相对变化量约为１０％，而且，该变化量与探测器性能有很好的对应关系
The resistance of HgCdTe detector was measured at room temperature and liquid nitrogen background radiation. The influence of background radiation on the device resistance was studied from the change of resistance. The results show that the detector resistance The relative change is about 10%, and the amount of change has a good correspondence with the detector performance