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STATZ模型是表征GaAsMESFET特性的常用模型,具有表达式简洁、参数少的优点。通过尝试将STATZ模型用于表征射频MOSFET的直流特性,提取并在ADS软件中优化了STATZ直流模型的参数。为了提高仿真精度,模型必须考虑晶体管漏极与源极的寄生电阻,根据MOSFET处于强反型区且漏-源电压为零时的等效电路模型提取了晶体管的漏极和源极的寄生电阻。在ADS软件中利用STATZ模型对MOSFET的直流特性进行了仿真,测量的MOSFET直流曲线与仿真曲线一致性很好,验证了模型的良好的精确度,证明了GaAs STATZ模型可以用于表征射频MOSFET的直流特性。晶体管采用中芯国际的0.13μm RF CMOS工艺制作。
The STATZ model is a common model for characterizing GaAsMESFETs and has the advantages of simple expression and few parameters. By attempting to use the STATZ model to characterize the DC characteristics of the RF MOSFET, the parameters of the STATZ DC model were extracted and optimized in the ADS software. In order to improve the simulation accuracy, the model must consider the parasitic resistance of the drain and the source of the transistor. The parasitic resistance of the drain and the source of the transistor is extracted according to the equivalent circuit model when the MOSFET is in a strong inversion region and the drain-source voltage is zero . In the ADS software, STATZ model was used to simulate the DC characteristics of the MOSFET. The measured DC-DC curves were in good agreement with the simulation curves, which verified the good accuracy of the model. It was proved that the GaAs STATZ model can be used to characterize the RF MOSFET DC characteristics. Transistors are manufactured using SMIC’s 0.13μm RF CMOS process.