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A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AlInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. Al N/GaN and AlInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/ m2 with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.
A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN / GaN MOSHEMT and its effect on gate capacitances of AlInN / GaN and AlGaN / GaN MOSHEMTs through TCAD simulations. Al N / GaN and AlInN / GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF / m2 with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN / GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.