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为了低损耗开关模式电源(SMPS)结构的最佳化,硅工艺技术的进步已经使MOSFET几代器件持续地具有较高的跨导,并且使得前几代器件被逐渐淘汰。然而当这些高跨导的器件应用于线性模式时,具有热集中的倾向。由于已发表的分析方法需要硅器件数据的支持,而这些数据常常涉及知识产权,因此向电路的设计者提供这些方法几乎是不能使用的。本文介绍了使用非知识产权的规一化的芯片面积信息作为评价在线性模式应用中的MOSFET器件适用性的客观标准。
In order to optimize the structure of a low-loss switched-mode power supply (SMPS), advancements in silicon technology have consistently led to higher transconductance of several generations of MOSFETs and the earlier generations of devices have been phased out. However, these high-transconductance devices have a tendency to heat when they are used in a linear mode. Since published analytical methods require the support of silicon device data, which often involves intellectual property, providing them to circuit designers is almost unusable. This article describes the use of non-intellectualized, standardized chip area information as an objective measure of the suitability of MOSFET devices in linear mode applications.