虽然上述单个元件为研究工作带来了许多问题和机会,但最重要和最难的问题是把这些器件集成起来,那怕只集成几个器件。这些困难已被很好地编入文献;人们一直在努力克服这些困难,具有代表性的例子便是刻蚀再生长制造技术和混成方法。化合物半导体微电子技术工程研究中心正在研究一种不同的方法,如果成功的话,可以把它们称之为Ⅲ—Ⅴ族光电子集成电路,它是目前硅集成电路技术的模拟。以后,所有的器件都用原始基片材料 Although the above single components have brought many problems and opportunities for research, the most important and difficult issue is to integrate these devices even if only a few devices are integrated. These difficulties have been well documented, and efforts have been made to overcome these difficulties. Representative examples are the etching and re-growth manufacturing techniques and hybrid methods. The Compound Semiconductor Microelectronics Engineering Research Center is working on a different approach that, if successful, can be called Group III-V optoelectronic integrated circuits, which is the current simulation of silicon integrated circuit technology. Later, all devices use the original substrate material