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本实验采用真空蒸馏多级冷凝提纯粗铟的实验研究,其特点是通过高温真空蒸馏使得粗铟挥发,根据不同金属元素冷凝温度的不同,设置适合的冷凝温度梯度,从而达到除杂提纯的效果,实验表明,由于冷凝温度的不同杂质元素分别冷凝在1-10级的冷凝盘的两端,而金属铟主要集中在中间冷凝盘中。最佳条件:温度1400℃,保温1 h,压强为10~15 Pa,此时铟主要分布在中间3-6冷凝盘中,其中杂质元素Cu、Cd、Fe、Al、Sn主要分布在1-2级和杂质元素Pb、Tl主要分布在8-10级冷凝盘,其中3、4冷凝盘中铟纯度为99.9%,直收率为53.87%,5、6冷凝盘的铟纯度为99.99%,直收率为36.7%,,因此99.9%以上的直收率达到90%以上,杂质可以达到4~6 N(99.99%~99.9999%)铟的国家标准要求。
In this experiment, vacuum distillation of multi-stage condensation of crude indium purification experimental study, which is characterized by high temperature vacuum distillation of crude indium volatilization, according to the different condensation temperature of the metal element, set the appropriate condensation temperature gradient, so as to achieve the effect of impurity removal and purification Experiments show that due to the condensation temperature of different impurity elements were condensed in the 1-10 stage condensate plate at both ends, while the metal indium mainly concentrated in the intermediate condensation plate. The optimal conditions were as follows: the temperature was 1400 ℃, the temperature was kept for 1 h and the pressure was 10 ~ 15 Pa. At this time, indium was mainly distributed in the middle 3-6 condensation plate. The impurity elements Cu, Cd, Fe, Al and Sn were mainly distributed in 1- 2 and impurity elements Pb and Tl are mainly distributed in the 8-10 condensation plates, in which the purity of indium in 3,4 condensation plates is 99.9%, the direct yield is 53.87%, the purity of indium in 5,6 condensation plates is 99.99% The direct yield of 36.7%, so more than 99.9% of the direct yield reached more than 90%, impurities can reach 4 ~ 6N (99.99% ~ 99.9999%) indium national standards.