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采用脉冲控制模式将气体放电伏安特性由磁控溅射离子镀的“正欧姆”区间引入到“反欧姆”区间,并在不同靶电流密度下制备了TiN薄膜。研究了正反欧姆区间伏安特性对薄膜微观结构及性能的影响。结果表明:在靶电流密度(I_(td))大于0.2 A·cm~(-2)的反欧姆区间,薄膜具有良好的表面质量和致密程度;且薄膜的硬度和膜/基结合强度分别由正欧姆区间I_(td)为0.11A·cm~(-2)的9.9 GPa、4.5 N提升到反欧姆区间I_(-td)为0.38 A·cm~(-2)的25.8 GPa、18 N。
The pulsed control mode was used to introduce the gas discharge voltammetry into the “anti-ohm” region by magnetron sputter ion plating “positive ohm” and TiN thin films were prepared at different target current densities. The influence of the volt-ampere characteristics of the forward and reverse Ohms on the microstructure and properties of the films was investigated. The results show that the film has good surface quality and compactness in the anti-ohmic range with the target current density (I td) higher than 0.2 A · cm -2. The film hardness and film / 9.9 GPa and 4.5 N with positive Io (td) of 0.11A · cm -2 increased to 25.8 GPa and 18N with 0.38 A · cm -2 I_ (-td) in the anti-ohmic range.