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介绍了两种可以用于GaN高电子迁移率晶体管(HEMT)器件建模的噪声模型,Pucel等效电路噪声模型和Pospieszalski温度噪声模型。基于Pucel等效电路噪声模型,介绍了利用器件本征噪声参数推导Pucel噪声模型参数的过程,并且给出了微波噪声模型参数的表达式。利用上述方法,针对200μm栅宽的GaN HEMT器件,提取了噪声模型参数值,并且在ADS仿真软件平台上建立了GaN HEMT器件的Pucel等效电路噪声模型,仿真结果与实测结果在频率为4~18 GHz带宽内吻合较好,说明提出的噪声模型参数提取方法对于GaN HEMT器件噪声仿真的实用性和准确性。
Two noise models that can be used to model GaN HEMTs, the Pucel equivalent circuit noise model, and the Pospieszalski temperature noise model are presented. Based on the Puel equivalent circuit noise model, the process of deriving the parameters of Pucel noise model by using intrinsic noise parameters of the device is introduced, and the expressions of the parameters of the microwave noise model are given. The noise model parameters were extracted for GaN HEMT devices with 200μm gate-width. The Pucel equivalent circuit noise model of GaN HEMT devices was established on the ADS simulation software platform. The simulation results and the measured results show that, The agreement within 18 GHz bandwidth is good, indicating the practicability and accuracy of the proposed noise model parameter extraction method for noise simulation of GaN HEMT devices.