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报道超薄有源层ＡｌｘＧａ１－ｘＡＳ／ＧａＡｓ分别限制双异质结构半导体激光器的液相外延的过程。讨论了过冷度、生长温度和降温速率等对生长速率的影响。扫描电镜测得生长温度为６８０℃时，ＧａＡｓ有源层厚度可低至２５～３５ｎｍ。宽接触分别限制双异质结构ＬＤｓ的室温连续阈值电流密度多在７００～８００Ａ／ｃｍ２。
It is reported that the ultra-thin active layer AlxGa1-xAS / GaAs limits the liquid phase epitaxy of double heterostructure semiconductor laser respectively. The effects of undercooling, growth temperature and cooling rate on the growth rate were discussed. Scanning electron microscopy measured growth temperature of 680 ℃, GaAs active layer thickness can be as low as 25 ~ 35nm. The wide-range continuous threshold current densities of double-heterostructured LDs were 700 ~ 800A / cm2, respectively.