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采用RBS分析方法,研究了宽温区(LNT—400℃)下Xe~(2+)离子束诱导引起的金属/硅界面反应,得到多种硅化物单相或双相生长层,讨论了化学驱动力和辐射增强扩散效应。
The RBS analysis was used to study the metal / silicon interface reaction induced by Xe ~ (2+) ion beam in a wide temperature range (LNT-400 ° C) to obtain a variety of single- or dual-phase silicide growth layers. Driving force and radiation enhance the diffusion effect.