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提出了双面阶梯埋氧层部分绝缘硅(silicon oninsulator,SIO)高压器件新结构.双面阶梯埋氧层的附加电场对表面电场的调制作用使表面电场达到近似理想的均匀分布,耗尽层通过源极下硅窗口进一步向硅衬底扩展,使埋氧层中纵向电场高达常规SOI结构的两倍,且缓解了常规SOI结构的自热效应.建立了漂移区电场的二维解析模型,获得了器件结构参数间的优化关系.结果表明,在导通电阻相近的情况下,双面阶梯埋氧层部分SOI结构击穿电压较常规SOI器件提高58%,温度降低10—30 K.
A new structure of double-sided high-voltage silicon oninsulator (SIO) device is proposed.The modulation effect of the additional electric field of the double-sided stepped buried oxide layer on the surface electric field makes the surface electric field reach an approximately ideal uniform distribution, and the depletion layer Further spreading to the silicon substrate through the source silicon window makes the longitudinal electric field in the buried oxide layer up to twice that of the conventional SOI structure and alleviates the self-heating effect of the conventional SOI structure. A two-dimensional analytical model of the electric field in the drift region is obtained The results show that the breakdown voltage of SOI structure in double-sided stepwise buried oxide layer is increased by 58% and the temperature is reduced by 10-30K when the on-resistance is similar.