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采用射频磁控反应溅射法在金刚石自支撑膜衬底上沉积了AlN薄膜,XRD结果表明得到了(002)面择优取向的AlN薄膜;AFM的表面形貌结果显示薄膜表面平整,晶粒均匀,表面粗糙度为2.97 nm。XPS分析结果表明,离子剥蚀2.1 nm后Al/N原子百分比接近于1∶1;结合红外透过曲线和纳米力学探针测试,表明AlN薄膜在1500～800 cm-1波段对金刚石膜有约14%的增透作用,其平均硬度为21.5 GPa,平均弹性模量为233.3 GPa。
AlN thin films were deposited on the diamond free-standing film substrates by RF magnetron reactive sputtering. The XRD results showed that the (002) preferred orientation AlN films were obtained. The surface morphology of AFM showed that the film surface was smooth and the grains were uniform , The surface roughness of 2.97 nm. The results of XPS analysis showed that the percentage of Al / N atoms was close to 1: 1 after 2.1 nm ion etching, and the infrared transmittance curve and nano-mechanical probe test showed that the AlN film has a diamond content of about 14 at 1500-800 cm-1 % Of the penetration enhancement, the average hardness of 21.5 GPa, the average elastic modulus of 233.3 GPa.