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通过求解修正的基于k.p方法的有效质量哈密顿方程并与泊松方程进行自洽,得到在极化效应影响下的不同阱宽和垒厚的InGaN/GaN多量子阱导带和价带的能带结构,并计算了不同多量子阱结构的自发辐射谱。仿真结果表明:阱宽和垒厚对InGaN/GaN多量子阱结构的光电子学特性有很大的影响。随着阱宽和垒厚的增加,InGaN/GaN多量子阱结构的辐射峰值波长出现一定程度的红移,辐射强度也有所降低。极化效应产生的极化电场能够减小InGaN/GaN多量子阱结构导带和价带间的带隙宽度,并使电子和空穴的分布产生空间分离。与不考虑极化效应的结果对比得出,在极化效应的影响下,InGaN/GaN多量子阱结构的光电子学特性对阱宽和垒厚的依赖性增强。
By solving the effective mass Hamiltonian based on the kp method and self-consistent with the Poisson equation, we can get the conduction band and valence band of InGaN / GaN multiple quantum wells with different well width and thickness under the influence of polarization Band structure and calculated the spontaneous emission spectra of different MQW structure. The simulation results show that the well width and the thickness of the barrier have a great influence on the optoelectronic properties of the InGaN / GaN multiple quantum well structure. With the increase of well width and thickness, the peak wavelength of InGaN / GaN multiple quantum well structure shows a certain degree of redshift, and the radiation intensity also decreases. The polarization electric field produced by the polarization effect can reduce the band gap width between the conduction band and the valence band in the InGaN / GaN multiple quantum well structure and make the distribution of electrons and holes spatially separated. Comparing with the results without considering the polarization effect, it is found that the dependence of the well width and the barrier thickness of the InGaN / GaN multi-quantum well structure on the optoelectronic properties is enhanced under the influence of the polarization effect.