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介绍了808nm高功率量子阱远结半导体激光器的结构和器件特性，测试了器件的低频电噪声，讨论了噪声与频率、注入电流及器件质量的关系。结果表明，808nm高功率量子阱远结半导体激光器的阈值电流在老化初期随时间的延续而降低，其噪声在低频段主要为1/f噪声，且在阈值附近有最大值，器件噪声与器件质量有一定的相关性。
The structure and device characteristics of 808nm high power quantum well far junction semiconductor laser are introduced. The low frequency electrical noise of the device is tested. The relationship between noise and frequency, injection current and device quality is discussed. The results show that the threshold current of the 808nm high power quantum well far-junction semiconductor laser decreases with the lapse of time in the early aging. The noise is mainly 1 / f noise in the low frequency range and has the maximum near the threshold. The device noise and device quality A certain degree of relevance.