日本富士通公司采用超晶格技术研制成谐振隧道热电子晶体管(Resonant Tunneling Hot Electron Transistor)。谐振隧道热电子晶体管是根据AlGaAs和GaAs超晶格构成的量子阱能起热电子晶体管发射极势垒效应的特点而制成的。这种晶体管是由分子束外延技术制成,由18层50 Fujitsu Japan uses superlattice technology to develop a resonant tunneling hot electron transistor (Resonant Tunneling Hot Electron Transistor). The resonant tunneling thermal electron transistor is made according to the fact that the quantum well formed by the AlGaAs and GaAs superlattices can function as the emitter barrier of the thermal electron transistor. This transistor is made by molecular beam epitaxy, consisting of 18 layers of 50