X射线光刻技术(XRL)是刻制130nm,100nm和70nm最小尺寸图形的可行方案之一.其它候选技术还有193nmArF准分子激光光刻、电子束投影、电子束直接写入、极紫外(EUV)及离子束投影光刻等.然而,在各种技术之中,由于XRL具有良好的临界尺寸控制及可扩展到刻制70nm以下最小尺寸图形等优点而处于领先地位.虽然XRL所需要的设备和材料业已商品化,其它 XR lithography (XRL) is one of the viable options for patterning 130nm, 100nm and 70nm minimum size patterns. Other candidate technologies include 193nm ArF excimer laser lithography, electron beam projection, electron beam direct writing, extreme ultraviolet EUV), ion beam projection lithography, etc. However, among the various technologies, XRL is in the lead due to its excellent critical dimension control and its scalability up to the minimum size of 70 nm, etc. Although XRL requires Equipment and materials have been commercialized, others