硅(锂)探测器级硅单晶既要纯度高、又要控制电阻率范围,并能制造成性能优良的探测器。本文从硅烷多晶硅的高纯特点出发,根据钼管多晶硅棒这一具体条件,提出了中心孔道掺杂法。平用此法后,P型硅单晶的电阻率能控制在1000～3000欧姆·厘米,与目标电阻率一致。电阻率均匀性也取得较大改善。中国原子能科学研究院用我校提供的这类硅单晶,制成了能量分辨率达157电子伏特的X射线探测器。 Silicon (lithium) detector grade silicon single crystal not only has high purity, but also control the resistivity range, and can be made into excellent performance detector. Based on the high purity characteristics of silane polycrystalline silicon, according to the specific conditions of polycrystalline silicon rods of molybdenum tube, a method of central hole doping was proposed. After using this method, the resistivity of P-type silicon single crystal can be controlled at 1000 ~ 3000 ohm · cm, consistent with the target resistivity. Resistivity uniformity has also been greatly improved. China Institute of Atomic Energy with this type of silicon single crystal provided by our school, made an energy resolution of 157 eV X-ray detector.