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已经制成摄像区第二层电极为透明电极的帧转移CCD摄像器件。器件的像素数为512(垂直)×340(水平),电极腐蚀图形良好。制作过程中存在的一个问题是铟一锡一氧化物透明薄膜(ITO)的腐蚀速率比SiO_2层低,采用新的CCD结构解决了这一问题。该器件在可见光波段的量子效率为0.5～0.75,特别是对兰光的灵敏度高于普通二层多晶硅电极CCD。
Has been made into the second layer of the imaging area of the electrode is a transparent electrode frame transfer CCD camera device. The number of pixels in the device is 512 (vertical) × 340 (horizontal) and the electrode corrosion pattern is good. One of the problems in the manufacturing process is that the corrosion rate of the indium tin-tin-oxide transparent thin film (ITO) is lower than that of the SiO 2 layer, and the new CCD structure solves this problem. The quantum efficiency of the device in the visible wavelength range of 0.5 to 0.75, in particular, the sensitivity of the blue light is higher than the ordinary two-layer polysilicon electrode CCD.