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本文采用AsCl_3—Ga—H_2体系,研究了衬底晶面与窗壁方向、气相组分以及窗孔的几何形状、尺寸和深度等因素对GaAs气相选择外延生长表面形貌的影响。研究结果表明,如果在一定量HCl气的外延系统内进行选择外延生长,在衬底晶面为(001),窗壁方向为(100)时各种大小和深度的方形和长方形窗孔材料均有良好的表面形貌。已用掺Te法制得18GC平面型肖特基二极管用的选择外延材料,外延层的杂质浓度为1×10~(17)cm~(-3),V_B≥_4V,厚度为2～3μ。文中对GaAs选择外延生长过程中的若干问题也作了初步探讨。
In this paper, AsCl 3 -Ga-H 2 system was used to investigate the effects of substrate crystal plane and window wall orientation, gas phase composition and the geometric shape, size and depth of the pores on the surface morphologies of GaAs vapor selective epitaxial growth. The results show that, if selective epitaxial growth is carried out within a certain amount of HCl gas epitaxial system, the square and rectangular window materials of various sizes and depths with (001) crystal plane and (100) Have a good surface appearance. The selective epitaxial material for the 18GC planar Schottky diode has been fabricated by the Te-doped method. The epitaxial layer has an impurity concentration of 1 × 10-17 cm -3, V_B≥_4V, and a thickness of 2-3μ. In this paper, some problems in GaAs epitaxial growth are also discussed.