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由于两瑞器件比三端器件结构简单,使得用半导体做成的在适当频率下(此频率与载流子通过它们的渡越时间有关)具有负阻的两端器件有它的潜在的重要性。这一负阻可与非对称传输元件(如回转器或霍耳效应片)组成“分置放大器(dissected amplifiers)”,它可以做得与通常的三端放大器类似,并可在高频下工作。在理论基础上分析了几种结构的特性,并且发现对适当设计的结构负阻是可能得到的。
Because both Rui devices are simpler in structure than the three-terminal device, making the two-terminal device with a negative resistance at a proper frequency (which is related to the carrier transit time through them) made of semiconductors has its potential importance . This negative resistance can form “dissected amplifiers” with asymmetric transmission elements such as gyrators or Hall effect pads that can be made similar to typical three-terminal amplifiers and operate at high frequencies . Several characteristics of the structure were analyzed on a theoretical basis and it was found possible to obtain a negative resistance to a properly designed structure.