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It is shown that the state of magnetization of the substrate is one of the main factors affectingthe properties of nonreciprocal latching ferrite microstrip phase shifter.Raising the residual magnet-ization of the substrate,increasing the ratio R(=4πM/4πM_s)(4πM—the magnetization of the“latchingstate”of the device,4πM_s—the saturation magnetization)are effective in reducing the insertionloss of the device,raising the effectiveness of phase shift,extending the band width,and reducing thedrive power,etc.Different methods of magnetization are analysed and compared.Photographsindicating the structure and the external form of the device are given and the main performances ofsingle-digit and multi-digit devices are also presented.
It is shown that the state of magnetization of the substrate is one of the main factors affecting the properties of nonreciprocal latching ferrite microstrip phase shifter. Raising the residual magnet-ization of the substrate, increasing the ratio R (= 4πM / 4πM_s) (4πM- the magnetization of the “latching stage” of the device, 4πM_s-the saturation magnetization are effective in reducing the insertion loss of the device, raising the effectiveness of phase shift, extending the band width, and reducing the drive power, etc. Different methods of magnetization are analysed and compared. Photographs of the structure and the external form of the device are given and the main performances of single-digit and multi-digit devices are also presented.